1～5 件を表示 ／ 全 5 件
Ultra-high vacuum system for HR-EELS apparatus
●Features This device utilizes inelastic scattering phenomena to measure the electron energy loss within a sample, serving as an electron detection-based surface analysis instrument to detect surface states of surface plasmon electrons.
LEED analysis ultra-high vacuum device
●Features This device is an electron detection surface analysis instrument that utilizes the diffraction phenomenon of electron beams to observe the crystalline structure of surfaces.
Ultra-high vacuum device for SEM
●Features This device is an electron detection type surface analysis instrument that scans the sample with a finely focused electron probe and images it using secondary electrons generated from within the sample, allowing surface shape observation on a CRT. It is applied in semiconductor side lengths, inspection devices, mask drawing devices, and more.
Ultra-high vacuum system for 3D atom probe device (3D-AP)
The position-sensitive atom probe (PoSAP), developed in 1988 by A. Cerezo and others at the University of Oxford, incorporates a position-sensitive detector into the atom probe's detection system, allowing for the simultaneous measurement of the flight time and position of atoms that reach the detector without using an aperture during analysis. This device not only enables the display of all constituent elements in an alloy present on the sample surface as a two-dimensional map with atomic-level spatial resolution, but it also allows for the extension of the two-dimensional map into a three-dimensional map by evaporating the sample surface one atomic layer at a time using the field evaporation phenomenon, thus enabling display and analysis in three dimensions.
Ultra-high vacuum system for scanning probe microscopy (SPM) device
●Features This device is a surface analysis microscope that scans a probe over the surface of a material, allowing for the acquisition of surface shapes at the atomic level in real space. By applying a negative voltage to the probe and bringing it close to the surface of the sample being observed, it can measure the tunneling current flowing in the space between the probe and the sample surface, enabling observation of the sample surface morphology at the atomic level using a Scanning Tunneling Microscope (STM). Additionally, it can investigate the morphology of the sample surface by detecting the forces acting between the atoms at the tip of the probe and the atoms on the sample surface, using an Atomic Force Microscope (AFM). The main configuration of the device consists of 3 to 4 chambers in ultra-high to extreme high vacuum regions, including an analysis chamber, a preparation chamber, a sample fabrication chamber, and a sample introduction chamber.
